Huawei discloses "semiconductor device" related patents
Recently, according to Tianyancha, Huawei Technologies Co., Ltd. has published a patent for "Semiconductor Devices and Related Modules, Circuits, and Manufacturing Methods", with publication number CN113054010A, and the application date is February 2021.
The patent abstract shows that the embodiment of the present invention discloses a semiconductor device and related modules, circuits, and manufacturing methods. The device includes an N-type drift layer, a P-type base layer, an N-type emitter layer, a gate, and a field stop layer. And the P-type collector layer, etc., where the field stop layer includes a first doped region and a second doped region stacked on the surface of the N-type drift layer, and the particle radius of the impurities in the first doped region is smaller than that of the second doped region. The particle radius of the impurity in the impurity region, the doping concentration of the first doping region, and the second doping region are higher than the doping concentration of the N-type drift layer. The above-mentioned semiconductor device can effectively reduce the leakage current between the collector and the emitter of the IGBT.
It is reported that IGBT technology is mostly used in power semiconductors. For Huawei, IGBT technology is used in its automotive R&D and photovoltaic inverter products. Some people in the industry believe that in power devices, multiple epitaxy is performed, and epitaxial layers of different doping elements and different thicknesses are added on the basis of the substrate to improve the leakage current between electrodes.