Číslo součásti PZT651T1G Kategorie Bipolar Transistors - BJT RoHS Datasheet PZT651T1G Popis Bipolar Transistors - BJT 2A 80V NPN
Kategorie Bipolar Transistors - BJT Collector- Base Voltage VCBO 80 V Collector- Emitter Voltage VCEO Max 60 V Collector-Emitter Saturation Voltage 0.5 V Configuration Single Continuous Collector Current 2 A DC Collector/Base Gain hfe Min 75 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 75 MHz Height 1.57 mm Length 6.5 mm Maximum DC Collector Current 2 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 65 C Mounting Style SMD/SMT Package / Case SOT-223-4 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 800 mW Product Type BJTs - Bipolar Transistors Series PZT651 Technology SI Transistor Polarity NPN Unit Weight Width 3.5 mm