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D965-R

D965-R
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Specifikace

Kategorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
42 V
Collector- Emitter Voltage VCEO Max
22 V
Collector-Emitter Saturation Voltage
0.35 V
Configuration
Single
Continuous Collector Current
5 A
DC Collector/Base Gain hfe Min
340
DC Current Gain hFE Max
950
Emitter- Base Voltage VEBO
6 V
Gain Bandwidth Product fT
-
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-92-3
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
750 mW
Product Type
BJTs - Bipolar Transistors
Technology
SI
Transistor Polarity
NPN
Unit Weight

Kategorie porodu

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nejnovější recenze

Napište svůj vlastní Reivew
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Takes 8 days to Japan. Good!
Long Service and Russia!
Great product. Arrived ahead of time. Thank you
Good material. Great seller, efficient and insurance. Ok
Více

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Související klíčová slova pro D965

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