MG06100S-BN4MM

Obrázky jsou pouze orientační

Specifikace

Kategorie
IGBT Modules
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.45 V
Configuration
Dual
Continuous Collector Current at 25 C
125 A
Gate-Emitter Leakage Current
400 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Chassis Mount
Package / Case
Package S
Packaging
Bulk
Pd - Power Dissipation
330 W
Product
IGBT Silicon Modules
Product Type
IGBT Modules
Series
MG06100S
Technology
SI
Unit Weight

nejnovější recenze

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

The goods are OK, thank you dealers.

Long Service and Russia!

Everything is fine!

Great product. Arrived ahead of time. Thank you

Související klíčová slova pro MG06

  • MG06100S-BN4MM Integrovaný
  • MG06100S-BN4MM RoHS
  • MG06100S-BN4MM PDF Datasheet
  • MG06100S-BN4MM Datasheet
  • MG06100S-BN4MM Část
  • MG06100S-BN4MM Koupit
  • MG06100S-BN4MM Distributor
  • MG06100S-BN4MM PDF
  • MG06100S-BN4MM Součástka
  • MG06100S-BN4MM Integrované obvody
  • MG06100S-BN4MM Stáhnout PDF
  • MG06100S-BN4MM Stáhnout datasheet
  • MG06100S-BN4MM Zásobování
  • MG06100S-BN4MM Dodavatel
  • MG06100S-BN4MM Cena
  • MG06100S-BN4MM Datový list
  • MG06100S-BN4MM obraz
  • MG06100S-BN4MM Obrázek
  • MG06100S-BN4MM Inventář
  • MG06100S-BN4MM Skladem
  • MG06100S-BN4MM Originál
  • MG06100S-BN4MM Nejlevnější
  • MG06100S-BN4MM Vynikající
  • MG06100S-BN4MM Bezolovnaté
  • MG06100S-BN4MM Specifikace
  • MG06100S-BN4MM Hot nabídky
  • MG06100S-BN4MM Cena za přestávku
  • MG06100S-BN4MM Technická data