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IGB20N60H3

IGB20N60H3
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Specifikace

Kategorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
40 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
170 W
Product Type
IGBT Transistors
Series
HighSpeed 3
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Kategorie porodu

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nejnovější recenze

Napište svůj vlastní Reivew
fast delivery, item as described, thanks!!
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Everything is excellent! recommend this seller!
Více

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Související klíčová slova pro IGB2

  • IGB20N60H3 Integrovaný
  • IGB20N60H3 RoHS
  • IGB20N60H3 PDF Datasheet
  • IGB20N60H3 Datasheet
  • IGB20N60H3 Část
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  • IGB20N60H3 Distributor
  • IGB20N60H3 PDF
  • IGB20N60H3 Součástka
  • IGB20N60H3 Integrované obvody
  • IGB20N60H3 Stáhnout PDF
  • IGB20N60H3 Stáhnout datasheet
  • IGB20N60H3 Zásobování
  • IGB20N60H3 Dodavatel
  • IGB20N60H3 Cena
  • IGB20N60H3 Datový list
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  • IGB20N60H3 Skladem
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  • IGB20N60H3 Nejlevnější
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  • IGB20N60H3 Specifikace
  • IGB20N60H3 Hot nabídky
  • IGB20N60H3 Cena za přestávku
  • IGB20N60H3 Technická data

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