Číslo součásti D1001UK Kategorie RF MOSFET Transistors RoHS Datasheet D1001UK Popis RF MOSFET Transistors Silicon DMOS RF FET 20W-28V-175HMz SE
Kategorie RF MOSFET Transistors Configuration Single Gain 16 dB Height 6.6 mm Id - Continuous Drain Current 5 A Length 24.76 mm Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Operating Frequency 175 MHz Output Power 20 W Package / Case DA Pd - Power Dissipation 50 W Product Type RF MOSFET Transistors Rds On - Drain-Source Resistance 1 Ohms Technology SI Transistor Polarity N-Channel Type RF Power MOSFET Vds - Drain-Source Breakdown Voltage 70 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V to 7 V Width 9.52 mm