Číslo součásti R6003KND3TL1 Kategorie MOSFET RoHS Datasheet R6003KND3TL1 Popis MOSFET 600V Vdss; 3A Id 44W Pd; TO-252
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 40 ns Forward Transconductance - Min 0.8 s Id - Continuous Drain Current 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 44 W Product Type MOSFET Qg - Gate Charge 8 nC Rds On - Drain-Source Resistance 1.5 Ohms Rise Time 17 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 32 ns Typical Turn-On Delay Time 17 ns Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 3.5 V