UF3C065080K3S

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Číslo součásti
UF3C065080K3S
Kategorie
MOSFET
RoHS
Datasheet
Popis
MOSFET 650V/80mOhm SiC FAST CASCODE G3 REDUCED Rth

Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
190 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
14 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
54 ns
Typical Turn-On Delay Time
25 ns
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
6 V

nejnovější recenze

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

it is safe and sound all, thank you seller!

Everything is excellent! recommend this seller!

Fast shippng. Good quality. I recomend this seller.

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