Číslo součásti SQ2361ES-T1_GE3 Kategorie MOSFET RoHS Datasheet SQ2361ES-T1_GE3 Popis MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 4 ns Forward Transconductance - Min 5 s Id - Continuous Drain Current 2.8 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SOT-23-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 2 W Product Type MOSFET Qg - Gate Charge 12 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 130 mOhms Rise Time 9 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 22 ns Typical Turn-On Delay Time 8 ns Unit Weight Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V