Číslo součásti SQ4532AEY-T1_GE3 Kategorie MOSFET RoHS Datasheet SQ4532AEY-T1_GE3 Popis MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
Kategorie MOSFET Channel Mode Enhancement Configuration Dual Fall Time 19 ns, 16 ns Forward Transconductance - Min 22 S, 5.5 S Id - Continuous Drain Current 7.3 A, 5.3 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SO-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 3.3 W, 3.3 W Product Type MOSFET Qg - Gate Charge 5.9 nC, 7.9 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 21 mOhms, 56 mOhms Rise Time 17 ns, 17 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel, P-Channel Transistor Type 1 N-Channel, 1 P-Channel Typical Turn-Off Delay Time 10 ns, 19 ns Typical Turn-On Delay Time 7 ns, 6 ns Unit Weight Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V, 2.5 V