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RJ1P12BBDTLL

RJ1P12BBDTLL
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Číslo součásti
RJ1P12BBDTLL
Kategorie
MOSFET
RoHS
Datasheet
Popis
MOSFET NCH 100V 120A POWER
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Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
54 ns
Id - Continuous Drain Current
120 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
178 W
Product Type
MOSFET
Qg - Gate Charge
80 nC
Rds On - Drain-Source Resistance
5.8 mOhms
Rise Time
33 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
125 ns
Typical Turn-On Delay Time
37 ns
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

Kategorie porodu

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nejnovější recenze

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Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Hello! Order received, very happy. Thank you very much!
Goods came in two weeks. Well packed. Track number tracked
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Více

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Související klíčová slova pro RJ1P

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