Číslo součásti SQ1902AEL-T1_GE3 Kategorie MOSFET RoHS Datasheet SQ1902AEL-T1_GE3 Popis MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
Kategorie MOSFET Channel Mode Enhancement Configuration Dual Fall Time 18 ns Forward Transconductance - Min 1.1 S Id - Continuous Drain Current 780 mA Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SOT-363-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 430 mW Product Type MOSFET Qg - Gate Charge 1.2 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 200 mOhms Rise Time 22 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 2 N-Channel Typical Turn-Off Delay Time 20 ns Typical Turn-On Delay Time 10 ns Unit Weight Vds - Drain-Source Breakdown Voltage 20 V Vgs - Gate-Source Voltage 12 V Vgs th - Gate-Source Threshold Voltage 600 mV