R6007ENX

Obrázky jsou pouze orientační
Číslo součásti
R6007ENX
Kategorie
MOSFET
RoHS
Datasheet
Popis
MOSFET 10V Drive Nch MOSFET

Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
35 ns
Id - Continuous Drain Current
7 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
46 W
Product Type
MOSFET
Qg - Gate Charge
20 nC
Rds On - Drain-Source Resistance
570 mOhms
Rise Time
25 ns
Series
Super Junction-MOS EN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
70 ns
Typical Turn-On Delay Time
25 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2 V

nejnovější recenze

Very good!

Quick delivery. Secure packing. Excellent product. Thank you

Yes, they are all here. :)

packed pretty good, all is ok,-seller.

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Související klíčová slova pro R600

  • R6007ENX Integrovaný
  • R6007ENX RoHS
  • R6007ENX PDF Datasheet
  • R6007ENX Datasheet
  • R6007ENX Část
  • R6007ENX Koupit
  • R6007ENX Distributor
  • R6007ENX PDF
  • R6007ENX Součástka
  • R6007ENX Integrované obvody
  • R6007ENX Stáhnout PDF
  • R6007ENX Stáhnout datasheet
  • R6007ENX Zásobování
  • R6007ENX Dodavatel
  • R6007ENX Cena
  • R6007ENX Datový list
  • R6007ENX obraz
  • R6007ENX Obrázek
  • R6007ENX Inventář
  • R6007ENX Skladem
  • R6007ENX Originál
  • R6007ENX Nejlevnější
  • R6007ENX Vynikající
  • R6007ENX Bezolovnaté
  • R6007ENX Specifikace
  • R6007ENX Hot nabídky
  • R6007ENX Cena za přestávku
  • R6007ENX Technická data