Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 35 ns Id - Continuous Drain Current 11 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Reel Packaging Cut Tape Part # Aliases Pd - Power Dissipation 53 W Product Type MOSFET Qg - Gate Charge 32 nC Rds On - Drain-Source Resistance 340 mOhms Rise Time 40 ns Series Super Junction-MOS EN Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 90 ns Typical Turn-On Delay Time 25 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 2 V