Číslo součásti R6047ENZ1C9 Kategorie MOSFET RoHS Datasheet R6047ENZ1C9 Popis MOSFET 10V Drive Nch MOSFET
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 100 ns Forward Transconductance - Min 13 S Id - Continuous Drain Current 47 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Reel Packaging Cut Tape Part # Aliases Pd - Power Dissipation 120 W Product Type MOSFET Qg - Gate Charge 145 nC Rds On - Drain-Source Resistance 72 mOhms Rise Time 100 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 260 ns Typical Turn-On Delay Time 50 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2 V