Číslo součásti R6020KNZ4C13 Kategorie MOSFET RoHS Datasheet R6020KNZ4C13 Popis MOSFET NCH 600V 20A POWER MOSFET
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 10 ns Id - Continuous Drain Current 20 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 231 W Product Type MOSFET Qg - Gate Charge 40 nC Rds On - Drain-Source Resistance 196 mOhms Rise Time 30 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 55 ns Typical Turn-On Delay Time 30 ns Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 3 V