Číslo součásti UF3C120150K4S Kategorie MOSFET RoHS Datasheet UF3C120150K4S Popis MOSFET 1200V 150mOhm SiC FAST CASCODE G3
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 8 ns Id - Continuous Drain Current 18.4 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-4 Packaging Tube Pd - Power Dissipation 166.7 W Product Type MOSFET Qg - Gate Charge 25.7 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 330 mOhms Rise Time 8 ns Series UF3C Technology SiC Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 26 ns Typical Turn-On Delay Time 21 ns Vds - Drain-Source Breakdown Voltage 1.2 kV Vgs - Gate-Source Voltage 25 V Vgs th - Gate-Source Threshold Voltage 3.5 V