Číslo součásti R6046ANZC8 Kategorie MOSFET RoHS Datasheet R6046ANZC8 Popis MOSFET SILICON N-Ch MOS FET
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 100 ns Id - Continuous Drain Current 46 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Number of Channels 1 Channel Packaging Bulk Part # Aliases Pd - Power Dissipation 130 W Product Type MOSFET Qg - Gate Charge 150 nC Rds On - Drain-Source Resistance 65 mOhms Rise Time 130 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 230 ns Typical Turn-On Delay Time 60 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 2.5 V