Číslo součásti R6004ENDTL Kategorie MOSFET RoHS Datasheet R6004ENDTL Popis MOSFET 10V Drive Nch MOSFET
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 40 ns Forward Transconductance - Min 1.5 s Height 2.5 mm Id - Continuous Drain Current 4 A Length 6.7 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Reel Part # Aliases Pd - Power Dissipation 20 W Product MOSFET Product Type MOSFET Qg - Gate Charge 15 nC Rds On - Drain-Source Resistance 980 mOhms Rise Time 22 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Type Power MOSFET Typical Turn-Off Delay Time 55 ns Typical Turn-On Delay Time 22 ns Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2 V Width 5.8 mm