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BC 850B E6327

BC 850B E6327
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Specifikace

Kategorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
45 V
Collector-Emitter Saturation Voltage
200 mV
Configuration
Dual
Continuous Collector Current
100 mA
DC Collector/Base Gain hfe Min
200
DC Current Gain hFE Max
450
Emitter- Base Voltage VEBO
6 V
Gain Bandwidth Product fT
250 MHz
Height
1 mm
Length
2.9 mm
Maximum DC Collector Current
200 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
330 mW
Product Type
BJTs - Bipolar Transistors
Series
BC850
Technology
SI
Transistor Polarity
NPN
Unit Weight
Width
1.3 mm

Kategorie porodu

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nejnovější recenze

Napište svůj vlastní Reivew
Takes 8 days to Japan. Good!
Hello! Order received, very happy. Thank you very much!
Works. Find the price of this product is very good
Goods came in two weeks. Well packed. Track number tracked
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Více

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Související klíčová slova pro BC 8

  • BC 850B E6327 Integrovaný
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  • BC 850B E6327 PDF Datasheet
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  • BC 850B E6327 PDF
  • BC 850B E6327 Součástka
  • BC 850B E6327 Integrované obvody
  • BC 850B E6327 Stáhnout PDF
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