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IGD06N60TATMA1

IGD06N60TATMA1
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Číslo součásti
IGD06N60TATMA1
Kategorie
IGBT Transistors
RoHS
Datasheet
Popis
IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed
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Specifikace

Kategorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
12 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
88 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Kategorie porodu

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nejnovější recenze

Napište svůj vlastní Reivew
My package arrived wet, not know where occurs this fact, but working all right
Received, Fast shipping, not checked yet
Quick delivery. Secure packing. Excellent product. Thank you
all exactly and work. радиолюбителя useful set to, thank you)
Quickly came to CET, all in one package. Look at the rules
Více

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