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IGOT60R070D1AUMA1

IGOT60R070D1AUMA1
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Číslo součásti
IGOT60R070D1AUMA1
Kategorie
MOSFET
RoHS
Datasheet
Popis
MOSFET 600V CoolGaN Power Transistor
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Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Fall Time
13 ns
Id - Continuous Drain Current
31 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PG-DSO-20
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
125 W
Product
CoolGaN
Product Type
MOSFET
Qg - Gate Charge
5.8 nC
Rds On - Drain-Source Resistance
70 mOhms
Rise Time
9 ns
Technology
GaN
Tradename
CoolGaN
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
15 ns
Typical Turn-On Delay Time
15 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
0.9 V

Kategorie porodu

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Související klíčová slova pro IGOT

  • IGOT60R070D1AUMA1 Integrovaný
  • IGOT60R070D1AUMA1 RoHS
  • IGOT60R070D1AUMA1 PDF Datasheet
  • IGOT60R070D1AUMA1 Datasheet
  • IGOT60R070D1AUMA1 Část
  • IGOT60R070D1AUMA1 Koupit
  • IGOT60R070D1AUMA1 Distributor
  • IGOT60R070D1AUMA1 PDF
  • IGOT60R070D1AUMA1 Součástka
  • IGOT60R070D1AUMA1 Integrované obvody
  • IGOT60R070D1AUMA1 Stáhnout PDF
  • IGOT60R070D1AUMA1 Stáhnout datasheet
  • IGOT60R070D1AUMA1 Zásobování
  • IGOT60R070D1AUMA1 Dodavatel
  • IGOT60R070D1AUMA1 Cena
  • IGOT60R070D1AUMA1 Datový list
  • IGOT60R070D1AUMA1 obraz
  • IGOT60R070D1AUMA1 Obrázek
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  • IGOT60R070D1AUMA1 Bezolovnaté
  • IGOT60R070D1AUMA1 Specifikace
  • IGOT60R070D1AUMA1 Hot nabídky
  • IGOT60R070D1AUMA1 Cena za přestávku
  • IGOT60R070D1AUMA1 Technická data

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