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GS-065-011-1-L

GS-065-011-1-L
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Číslo součásti
GS-065-011-1-L
Kategorie
MOSFET
RoHS
Datasheet
Popis
MOSFET 650V, 11 A, E-Mode GaN, Engineer Samples
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Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Id - Continuous Drain Current
11 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Moisture Sensitive
Yes
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
PDFN-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Product Type
MOSFET
Qg - Gate Charge
2 nC
Rds On - Drain-Source Resistance
380 mOhms
Series
GS-065
Technology
GaN Si
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 10 V to 7 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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nejnovější recenze

Napište svůj vlastní Reivew
High Quality driver, works excellent. It came to Moscow for 7 days.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
fast delivery
The timer is running. 10 PCS. Packed properly.
Seems well have not tested
Více

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Související klíčová slova pro GS-0

  • GS-065-011-1-L Integrovaný
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  • GS-065-011-1-L PDF Datasheet
  • GS-065-011-1-L Datasheet
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  • GS-065-011-1-L Distributor
  • GS-065-011-1-L PDF
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  • GS-065-011-1-L Integrované obvody
  • GS-065-011-1-L Stáhnout PDF
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  • GS-065-011-1-L Zásobování
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  • GS-065-011-1-L Datový list
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  • GS-065-011-1-L Nejlevnější
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  • GS-065-011-1-L Bezolovnaté
  • GS-065-011-1-L Specifikace
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