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R6004JND3TL1

R6004JND3TL1
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Číslo součásti
R6004JND3TL1
Kategorie
MOSFET
RoHS
Datasheet
R6004JND3TL1
Popis
MOSFET 600V Vdss; 4A Id 60W Pd; TO-252
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Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
33 ns
Id - Continuous Drain Current
4 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
60 W
Product Type
MOSFET
Qg - Gate Charge
10.5 nC
Rds On - Drain-Source Resistance
1.43 Ohms
Rise Time
11 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
24 ns
Typical Turn-On Delay Time
13 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
5 V

Kategorie porodu

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nejnovější recenze

Napište svůj vlastní Reivew
fast delivery, item as described, thanks!!
Received, Fast shipping, not checked yet
all exactly and work. радиолюбителя useful set to, thank you)
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Více

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Lidé, kteří si prohlížejí R6004JND3TL1 pak koupil

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R6004JND3TL1 Novinky

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Související klíčová slova pro R600

  • R6004JND3TL1 Integrovaný
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  • R6004JND3TL1 Integrované obvody
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