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BF1105R,215

BF1105R,215
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Specifikace

Kategorie
RF MOSFET Transistors
Channel Mode
Enhancement
Configuration
Single Dual Gate
Height
1 mm
Id - Continuous Drain Current
30 mA
Length
3 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
SOT-143R-4
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
200 mW
Product Type
RF MOSFET Transistors
Rds On - Drain-Source Resistance
-
Technology
SI
Transistor Polarity
Dual N-Channel
Type
RF Small Signal MOSFET
Unit Weight
Vds - Drain-Source Breakdown Voltage
7 V, 7 V
Vgs - Gate-Source Voltage
7 V, 7 V
Vgs th - Gate-Source Threshold Voltage
0.8 V
Width
1.4 mm

Kategorie porodu

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nejnovější recenze

Napište svůj vlastní Reivew
My package arrived wet, not know where occurs this fact, but working all right
Takes 8 days to Japan. Good!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Thank You all fine, packed very well
Everything is excellent! recommend this seller!
Více

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BF1105R,215 Novinky

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Související klíčová slova pro BF11

  • BF1105R,215 Integrovaný
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  • BF1105R,215 PDF Datasheet
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  • BF1105R,215 Distributor
  • BF1105R,215 PDF
  • BF1105R,215 Součástka
  • BF1105R,215 Integrované obvody
  • BF1105R,215 Stáhnout PDF
  • BF1105R,215 Stáhnout datasheet
  • BF1105R,215 Zásobování
  • BF1105R,215 Dodavatel
  • BF1105R,215 Cena
  • BF1105R,215 Datový list
  • BF1105R,215 obraz
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  • BF1105R,215 Inventář
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  • BF1105R,215 Specifikace
  • BF1105R,215 Hot nabídky
  • BF1105R,215 Cena za přestávku
  • BF1105R,215 Technická data

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