Číslo součásti UF3C120040K4S Kategorie MOSFET RoHS Datasheet UF3C120040K4S Popis MOSFET 1200V 35mOhm SiC Cascode Fast
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 10 ns Id - Continuous Drain Current 65 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-4 Packaging Tube Pd - Power Dissipation 429 W Product Type MOSFET Qg - Gate Charge 51 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 45 mOhms Rise Time 27 ns Series UF3C Technology SiC Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 50 ns Typical Turn-On Delay Time 24 ns Vds - Drain-Source Breakdown Voltage 1200 V Vgs - Gate-Source Voltage 25 V Vgs th - Gate-Source Threshold Voltage 4 V