UF3C120080K4S

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Číslo součásti
UF3C120080K4S
Kategorie
MOSFET
RoHS
Datasheet
Popis
MOSFET 1200V 80mOhm SiC Cascode Fast

Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
10 ns
Id - Continuous Drain Current
33 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-4
Packaging
Tube
Pd - Power Dissipation
254.2 W
Product Type
MOSFET
Qg - Gate Charge
51 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
100 MOhms
Rise Time
13 ns
Series
UF3C
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
43 ns
Typical Turn-On Delay Time
33 ns
Vds - Drain-Source Breakdown Voltage
1200 V
Vgs - Gate-Source Voltage
25 V
Vgs th - Gate-Source Threshold Voltage
4 V

nejnovější recenze

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Works. Find the price of this product is very good

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

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