Číslo součásti SQ4946AEY-T1_GE3 Kategorie MOSFET RoHS Datasheet SQ4946AEY-T1_GE3 Popis MOSFET 60V 7A 4W AEC-Q101 Qualified
Kategorie MOSFET Channel Mode Enhancement Configuration Dual Fall Time 2.1 ns, 2.1 ns Forward Transconductance - Min 15 S, 15 S Height 1.75 mm Id - Continuous Drain Current 7 A Length 4.9 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SO-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 4 W Product Type MOSFET Qg - Gate Charge 18 nC, 18 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 33 mOhms, 33 mOhms Rise Time 3.3 ns, 3.3 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 2 N-Channel Typical Turn-Off Delay Time 22.4 ns, 22.4 ns Typical Turn-On Delay Time 7 ns, 7 ns Unit Weight Vds - Drain-Source Breakdown Voltage 60 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V Width 3.9 mm