Číslo součásti R6009END3TL1 Kategorie MOSFET RoHS Datasheet R6009END3TL1 Popis MOSFET NCH 600V 9A POWER MOSFET
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 30 ns Id - Continuous Drain Current 9 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-252-3 Packaging Cut Tape Packaging MouseReel Packaging Reel Pd - Power Dissipation 94 W Product Type MOSFET Qg - Gate Charge 23 nC Rds On - Drain-Source Resistance 535 mOhms Rise Time 35 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 75 ns Typical Turn-On Delay Time 25 ns Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2 V