Číslo součásti SQ4284EY-T1_GE3 Kategorie MOSFET RoHS Datasheet SQ4284EY-T1_GE3 Popis MOSFET 40V 8A 3.9W AEC-Q101 Qualified
Kategorie MOSFET Channel Mode Enhancement Configuration Dual Fall Time 11 ns, 11 ns Forward Transconductance - Min 30 S, 30 S Id - Continuous Drain Current 8 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case SO-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 3.9 W Product Type MOSFET Qg - Gate Charge 45 nC, 45 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 11.2 mOhms Rise Time 40 ns, 40 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 2 N-Channel Typical Turn-Off Delay Time 32 ns, 32 ns Typical Turn-On Delay Time 10 ns, 10 ns Unit Weight Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V