Číslo součásti SQ3418AEEV-T1_GE3 Kategorie MOSFET RoHS Datasheet SQ3418AEEV-T1_GE3 Popis MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 37 ns Forward Transconductance - Min 13 S Height 1.1 mm Id - Continuous Drain Current 8 A Length 3.05 mm Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TSOP-6 Packaging Reel Packaging Cut Tape Pd - Power Dissipation 5 W Product Type MOSFET Qg - Gate Charge 12.4 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 26 mOhms Rise Time 28 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 12 ns Typical Turn-On Delay Time 6 ns Vds - Drain-Source Breakdown Voltage 40 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1.5 V Width 1.65 mm