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R6009KNJTL

R6009KNJTL
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Číslo součásti
R6009KNJTL
Kategorie
MOSFET
RoHS
Datasheet
Popis
MOSFET Nch 600V 9A Si MOSFET
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Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
28 ns
Forward Transconductance - Min
2.3 S
Id - Continuous Drain Current
9 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
94 W
Product Type
MOSFET
Qg - Gate Charge
16.5 nC
Rds On - Drain-Source Resistance
500 mOhms
Rise Time
33 ns
Series
Super Junction-MOS KN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
37 ns
Typical Turn-On Delay Time
20 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

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nejnovější recenze

Napište svůj vlastní Reivew
Thanks for your feedback!
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Good material. Great seller, efficient and insurance. Ok
Více

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Lidé, kteří si prohlížejí R6009KNJTL pak koupil

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Související klíčová slova pro R600

  • R6009KNJTL Integrovaný
  • R6009KNJTL RoHS
  • R6009KNJTL PDF Datasheet
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  • R6009KNJTL Koupit
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  • R6009KNJTL PDF
  • R6009KNJTL Součástka
  • R6009KNJTL Integrované obvody
  • R6009KNJTL Stáhnout PDF
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  • R6009KNJTL Specifikace
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