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TP0606N3-G

TP0606N3-G
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Číslo součásti
TP0606N3-G
Kategorie
MOSFET
RoHS
Datasheet
Popis
MOSFET 60V 3.5Ohm
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Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
15 ns
Forward Transconductance - Min
300 ms
Height
5.33 mm
Id - Continuous Drain Current
320 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
1 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
3.5 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Type
FET
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
60 V
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1 V
Width
4.19 mm

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nejnovější recenze

Napište svůj vlastní Reivew
Very good!
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
packed pretty good, all is ok,-seller.
Thank You all fine, packed very well
Perfectly.
Více

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Související klíčová slova pro TP06

  • TP0606N3-G Integrovaný
  • TP0606N3-G RoHS
  • TP0606N3-G PDF Datasheet
  • TP0606N3-G Datasheet
  • TP0606N3-G Část
  • TP0606N3-G Koupit
  • TP0606N3-G Distributor
  • TP0606N3-G PDF
  • TP0606N3-G Součástka
  • TP0606N3-G Integrované obvody
  • TP0606N3-G Stáhnout PDF
  • TP0606N3-G Stáhnout datasheet
  • TP0606N3-G Zásobování
  • TP0606N3-G Dodavatel
  • TP0606N3-G Cena
  • TP0606N3-G Datový list
  • TP0606N3-G obraz
  • TP0606N3-G Obrázek
  • TP0606N3-G Inventář
  • TP0606N3-G Skladem
  • TP0606N3-G Originál
  • TP0606N3-G Nejlevnější
  • TP0606N3-G Vynikající
  • TP0606N3-G Bezolovnaté
  • TP0606N3-G Specifikace
  • TP0606N3-G Hot nabídky
  • TP0606N3-G Cena za přestávku
  • TP0606N3-G Technická data

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