R6015ENZC8

Obrázky jsou pouze orientační
Číslo součásti
R6015ENZC8
Kategorie
MOSFET
RoHS
Datasheet
Popis
MOSFET 10V Drive Nch MOSFET

Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
45 ns
Forward Transconductance - Min
4 s
Id - Continuous Drain Current
15 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-3PF-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
120 W
Product Type
MOSFET
Qg - Gate Charge
40 nC
Rds On - Drain-Source Resistance
260 mOhms
Rise Time
55 ns
Series
Super Junction-MOS EN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
105 ns
Typical Turn-On Delay Time
30 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

nejnovější recenze

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Yes, they are all here. :)

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

fast delivery

the photo in comparison with cheap. Delivery fast

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