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R6006ANDTL

R6006ANDTL
Obrázky jsou pouze orientační
Číslo součásti
R6006ANDTL
Kategorie
MOSFET
RoHS
Datasheet
Popis
MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESIST
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Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
35 ns
Forward Transconductance - Min
1.7 S
Id - Continuous Drain Current
6 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
40 W
Product Type
MOSFET
Qg - Gate Charge
15 nC
Rds On - Drain-Source Resistance
900 mOhms
Rise Time
36 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
50 ns
Typical Turn-On Delay Time
22 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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nejnovější recenze

Napište svůj vlastní Reivew
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Decent quality, not минвелл certainly, but enough decent
Shipping a little 1 weeks, normal packing, the procedure is complete.
Works. Recommend
Looks good
Více

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Související klíčová slova pro R600

  • R6006ANDTL Integrovaný
  • R6006ANDTL RoHS
  • R6006ANDTL PDF Datasheet
  • R6006ANDTL Datasheet
  • R6006ANDTL Část
  • R6006ANDTL Koupit
  • R6006ANDTL Distributor
  • R6006ANDTL PDF
  • R6006ANDTL Součástka
  • R6006ANDTL Integrované obvody
  • R6006ANDTL Stáhnout PDF
  • R6006ANDTL Stáhnout datasheet
  • R6006ANDTL Zásobování
  • R6006ANDTL Dodavatel
  • R6006ANDTL Cena
  • R6006ANDTL Datový list
  • R6006ANDTL obraz
  • R6006ANDTL Obrázek
  • R6006ANDTL Inventář
  • R6006ANDTL Skladem
  • R6006ANDTL Originál
  • R6006ANDTL Nejlevnější
  • R6006ANDTL Vynikající
  • R6006ANDTL Bezolovnaté
  • R6006ANDTL Specifikace
  • R6006ANDTL Hot nabídky
  • R6006ANDTL Cena za přestávku
  • R6006ANDTL Technická data

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