Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 60 ns Height 15.4 mm Id - Continuous Drain Current 30 A Length 10.3 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Reel Packaging Cut Tape Part # Aliases Pd - Power Dissipation 86 W Product Type MOSFET Qg - Gate Charge 85 nC Rds On - Drain-Source Resistance 115 mOhms Rise Time 55 ns Series Super Junction-MOS EN Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 190 ns Typical Turn-On Delay Time 40 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 2 V Width 4.8 mm