Číslo součásti R6008ANX Kategorie MOSFET RoHS Datasheet R6008ANX Popis MOSFET Trans MOSFET N-CH 600V 8A
Kategorie MOSFET Configuration Single Fall Time 35 ns Forward Transconductance - Min 2.5 s Id - Continuous Drain Current 8 A Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Bulk Part # Aliases Pd - Power Dissipation 50 W Product Type MOSFET Qg - Gate Charge 21 nC Rds On - Drain-Source Resistance 800 mOhms Rise Time 25 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 60 ns Typical Turn-On Delay Time 25 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V