Číslo součásti R6046FNZ1C9 Kategorie MOSFET RoHS Datasheet R6046FNZ1C9 Popis MOSFET 10V Drive Nch MOSFET
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 68 ns Forward Transconductance - Min 15 s Id - Continuous Drain Current 46 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Reel Packaging Cut Tape Part # Aliases Pd - Power Dissipation 694 W Product Type MOSFET Qg - Gate Charge 150 nC Rds On - Drain-Source Resistance 75 mOhms Rise Time 120 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 240 ns Typical Turn-On Delay Time 73 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 3 V