Číslo součásti R6018ANJTL Kategorie MOSFET RoHS Datasheet R6018ANJTL Popis MOSFET NCH MOSFET T/R 10V DRIVE
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 65 ns Forward Transconductance - Min 6.5 S Id - Continuous Drain Current 18 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-3 Packaging Cut Tape Packaging MouseReel Packaging Reel Part # Aliases Pd - Power Dissipation 100 W Product Type MOSFET Qg - Gate Charge 55 nC Rds On - Drain-Source Resistance 210 mOhms Rise Time 85 ns Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 155 ns Typical Turn-On Delay Time 37 ns Unit Weight Vds - Drain-Source Breakdown Voltage 600 V Vgs - Gate-Source Voltage 30 V Vgs th - Gate-Source Threshold Voltage 2.5 V