Kategorie MOSFET Channel Mode Enhancement Configuration Single Height 17 mm Id - Continuous Drain Current 35 A Length 63 mm Maximum Operating Temperature + 150 C Minimum Operating Temperature - 40 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case V1-A-Pack-10 Packaging Bulk Pd - Power Dissipation 170 W Product Type MOSFET Rds On - Drain-Source Resistance 120 mOhms Technology SI Transistor Polarity N-Channel Transistor Type 1 N-Channel Typical Turn-Off Delay Time 220 ns Typical Turn-On Delay Time 100 ns Vds - Drain-Source Breakdown Voltage 500 V Vgs - Gate-Source Voltage 20 V Width 31.6 mm