DN0150ADJ-7

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Specifikace

Kategorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
50 V
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
120 at 2 mA, 6 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
60 MHz
Height
0.45 mm
Length
1 mm
Maximum DC Collector Current
0.1 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-963-6
Packaging
Reel
Pd - Power Dissipation
300 mW
Product Type
BJTs - Bipolar Transistors
Series
DN0150
Technology
SI
Transistor Polarity
NPN
Width
0.8 mm

nejnovější recenze

fast delivery, item as described, thanks!!

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Quickly came to CET, all in one package. Look at the rules

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Související klíčová slova pro DN01

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