DN0150BDJ-7

Obrázky jsou pouze orientační

Specifikace

Kategorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
50 V
Configuration
Dual
DC Collector/Base Gain hfe Min
200
DC Current Gain hFE Max
200 at 2 mA, 6 V
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
60 MHz
Height
0.45 mm
Length
1 mm
Maximum DC Collector Current
0.1 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-963-6
Packaging
Reel
Pd - Power Dissipation
300 mW
Product Type
BJTs - Bipolar Transistors
Series
DN0150
Technology
SI
Transistor Polarity
NPN
Width
0.8 mm

nejnovější recenze

Perfectly.

Everything is excellent! recommend this seller!

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Fast shippng. Good quality. I recomend this seller.

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