Číslo součásti D2012UK Kategorie RF MOSFET Transistors RoHS Datasheet D2012UK Popis RF MOSFET Transistors Silicon DMOS RF FET 10W-28V-1GHz SE
Kategorie RF MOSFET Transistors Channel Mode Enhancement Configuration Single Gain 10 dB Height 5.08 mm Id - Continuous Drain Current 4 A Length 18.92 mm Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Operating Frequency 1 GHz Output Power 10 W Package / Case DP Pd - Power Dissipation 42 W Product Type RF MOSFET Transistors Technology SI Transistor Polarity N-Channel Type RF Power MOSFET Vds - Drain-Source Breakdown Voltage 65 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V to 7 V Width 6.35 mm