- Číslo součásti
- D2012UK
- Kategorie
- RF MOSFET Transistors
- RoHS
- Datasheet
- Popis
- RF MOSFET Transistors Silicon DMOS RF FET 10W-28V-1GHz SE
D2012UK
Obrázky jsou pouze orientační
Specifikace
- Kategorie
- RF MOSFET Transistors
- Channel Mode
- Enhancement
- Configuration
- Single
- Gain
- 10 dB
- Height
- 5.08 mm
- Id - Continuous Drain Current
- 4 A
- Length
- 18.92 mm
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Operating Frequency
- 1 GHz
- Output Power
- 10 W
- Package / Case
- DP
- Pd - Power Dissipation
- 42 W
- Product Type
- RF MOSFET Transistors
- Technology
- SI
- Transistor Polarity
- N-Channel
- Type
- RF Power MOSFET
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V to 7 V
- Width
- 6.35 mm
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nejnovější recenze
Hello! Order received, very happy. Thank you very much!
Flavia
Everything is excellent! recommend this seller!
Stoyan Chaykov
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
D2012UK Novinky
03/14/2023
03/13/2023
03/13/2023
Související klíčová slova pro D201
- D2012UK Integrovaný
- D2012UK RoHS
- D2012UK PDF Datasheet
- D2012UK Datasheet
- D2012UK Část
- D2012UK Koupit
- D2012UK Distributor
- D2012UK PDF
- D2012UK Součástka
- D2012UK Integrované obvody
- D2012UK Stáhnout PDF
- D2012UK Stáhnout datasheet
- D2012UK Zásobování
- D2012UK Dodavatel
- D2012UK Cena
- D2012UK Datový list
- D2012UK obraz
- D2012UK Obrázek
- D2012UK Inventář
- D2012UK Skladem
- D2012UK Originál
- D2012UK Nejlevnější
- D2012UK Vynikající
- D2012UK Bezolovnaté
- D2012UK Specifikace
- D2012UK Hot nabídky
- D2012UK Cena za přestávku
- D2012UK Technická data
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