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SQ4182EY-T1_GE3

SQ4182EY-T1_GE3
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Číslo součásti
SQ4182EY-T1_GE3
Kategorie
MOSFET
RoHS
Datasheet
Popis
MOSFET N Ch 30Vds 20Vgs AEC-Q101 Qualified
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Specifikace

Kategorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
8 ns
Forward Transconductance - Min
107 S
Id - Continuous Drain Current
32 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SO-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
7.1 W
Product Type
MOSFET
Qg - Gate Charge
110 nC
Qualification
AEC-Q101
Rds On - Drain-Source Resistance
3.1 mOhms
Rise Time
10 ns
Series
SQ
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
57 ns
Typical Turn-On Delay Time
16 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

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Související klíčová slova pro SQ41

  • SQ4182EY-T1_GE3 Integrovaný
  • SQ4182EY-T1_GE3 RoHS
  • SQ4182EY-T1_GE3 PDF Datasheet
  • SQ4182EY-T1_GE3 Datasheet
  • SQ4182EY-T1_GE3 Část
  • SQ4182EY-T1_GE3 Koupit
  • SQ4182EY-T1_GE3 Distributor
  • SQ4182EY-T1_GE3 PDF
  • SQ4182EY-T1_GE3 Součástka
  • SQ4182EY-T1_GE3 Integrované obvody
  • SQ4182EY-T1_GE3 Stáhnout PDF
  • SQ4182EY-T1_GE3 Stáhnout datasheet
  • SQ4182EY-T1_GE3 Zásobování
  • SQ4182EY-T1_GE3 Dodavatel
  • SQ4182EY-T1_GE3 Cena
  • SQ4182EY-T1_GE3 Datový list
  • SQ4182EY-T1_GE3 obraz
  • SQ4182EY-T1_GE3 Obrázek
  • SQ4182EY-T1_GE3 Inventář
  • SQ4182EY-T1_GE3 Skladem
  • SQ4182EY-T1_GE3 Originál
  • SQ4182EY-T1_GE3 Nejlevnější
  • SQ4182EY-T1_GE3 Vynikající
  • SQ4182EY-T1_GE3 Bezolovnaté
  • SQ4182EY-T1_GE3 Specifikace
  • SQ4182EY-T1_GE3 Hot nabídky
  • SQ4182EY-T1_GE3 Cena za přestávku
  • SQ4182EY-T1_GE3 Technická data

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