Číslo součásti SQ4153EY-T1_GE3 Kategorie MOSFET RoHS Datasheet SQ4153EY-T1_GE3 Popis MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
Kategorie MOSFET Channel Mode Enhancement Configuration Single Fall Time 283 ns Forward Transconductance - Min 54 S Id - Continuous Drain Current 25 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case SO-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 7.1 W Product Type MOSFET Qg - Gate Charge 151 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 5.1 mOhms Rise Time 168 ns Series SQ Technology SI Tradename TrenchFET Transistor Polarity P-Channel Transistor Type 1 P-Channel Typical Turn-Off Delay Time 310 ns Typical Turn-On Delay Time 31 ns Unit Weight Vds - Drain-Source Breakdown Voltage 12 V Vgs - Gate-Source Voltage 8 V Vgs th - Gate-Source Threshold Voltage 900 mV