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IGB10N60T

IGB10N60T
Obrázky jsou pouze orientační
Číslo součásti
IGB10N60T
Kategorie
IGBT Transistors
RoHS
Datasheet
Popis
IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech
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Specifikace

Kategorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
24 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
110 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

Kategorie porodu

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nejnovější recenze

Napište svůj vlastní Reivew
it is safe and sound all, thank you seller!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
I received the product right, thank you very much 2018/12/03 ★★★★★
Více

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Související klíčová slova pro IGB1

  • IGB10N60T Integrovaný
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  • IGB10N60T PDF Datasheet
  • IGB10N60T Datasheet
  • IGB10N60T Část
  • IGB10N60T Koupit
  • IGB10N60T Distributor
  • IGB10N60T PDF
  • IGB10N60T Součástka
  • IGB10N60T Integrované obvody
  • IGB10N60T Stáhnout PDF
  • IGB10N60T Stáhnout datasheet
  • IGB10N60T Zásobování
  • IGB10N60T Dodavatel
  • IGB10N60T Cena
  • IGB10N60T Datový list
  • IGB10N60T obraz
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  • IGB10N60T Inventář
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  • IGB10N60T Nejlevnější
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  • IGB10N60T Bezolovnaté
  • IGB10N60T Specifikace
  • IGB10N60T Hot nabídky
  • IGB10N60T Cena za přestávku
  • IGB10N60T Technická data

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