IGB50N60T

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Číslo součásti
IGB50N60T
Kategorie
IGBT Transistors
RoHS
Datasheet
Popis
IGBT Transistors LOW LOSS IGBT TECH 600V 50A

Specifikace

Kategorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.5 V
Configuration
Single
Continuous Collector Current at 25 C
90 A
Gate-Emitter Leakage Current
100 nA
Height
4.4 mm
Length
10.25 mm
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
333 W
Product Type
IGBT Transistors
Series
TRENCHSTOP IGBT
Technology
SI
Tradename
TRENCHSTOP
Unit Weight
Width
9.9 mm

nejnovější recenze

Yes, they are all here. :)

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Goods came in two weeks. Well packed. Track number tracked

The goods are OK, thank you dealers.

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

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