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IGB50N65S5ATMA1

IGB50N65S5ATMA1
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Specifikace

Kategorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
1.35 V
Configuration
Single
Continuous Collector Current at 25 C
80 A
Continuous Collector Current Ic Max
80 A
Gate-Emitter Leakage Current
50 uA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
270 W
Product Type
IGBT Transistors
Series
TRENCHSTOPâ?¢5
Technology
SI
Tradename
TRENCHSTOP

Kategorie porodu

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nejnovější recenze

Napište svůj vlastní Reivew
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
My package arrived wet, not know where occurs this fact, but working all right
Quickly came to CET, all in one package. Look at the rules
Yes, they are all here. :)
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Více

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IGB50N65S5ATMA1 Novinky

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Související klíčová slova pro IGB5

  • IGB50N65S5ATMA1 Integrovaný
  • IGB50N65S5ATMA1 RoHS
  • IGB50N65S5ATMA1 PDF Datasheet
  • IGB50N65S5ATMA1 Datasheet
  • IGB50N65S5ATMA1 Část
  • IGB50N65S5ATMA1 Koupit
  • IGB50N65S5ATMA1 Distributor
  • IGB50N65S5ATMA1 PDF
  • IGB50N65S5ATMA1 Součástka
  • IGB50N65S5ATMA1 Integrované obvody
  • IGB50N65S5ATMA1 Stáhnout PDF
  • IGB50N65S5ATMA1 Stáhnout datasheet
  • IGB50N65S5ATMA1 Zásobování
  • IGB50N65S5ATMA1 Dodavatel
  • IGB50N65S5ATMA1 Cena
  • IGB50N65S5ATMA1 Datový list
  • IGB50N65S5ATMA1 obraz
  • IGB50N65S5ATMA1 Obrázek
  • IGB50N65S5ATMA1 Inventář
  • IGB50N65S5ATMA1 Skladem
  • IGB50N65S5ATMA1 Originál
  • IGB50N65S5ATMA1 Nejlevnější
  • IGB50N65S5ATMA1 Vynikající
  • IGB50N65S5ATMA1 Bezolovnaté
  • IGB50N65S5ATMA1 Specifikace
  • IGB50N65S5ATMA1 Hot nabídky
  • IGB50N65S5ATMA1 Cena za přestávku
  • IGB50N65S5ATMA1 Technická data

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