IGB30N60H3

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Specifikace

Kategorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
1.95 V
Configuration
Single
Continuous Collector Current at 25 C
60 A
Gate-Emitter Leakage Current
100 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
187 W
Product Type
IGBT Transistors
Series
HighSpeed 3
Technology
SI
Tradename
TRENCHSTOP
Unit Weight

nejnovější recenze

Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!

goods very well received very good quality

Quick delivery. Secure packing. Excellent product. Thank you

Everything as it is written in the description of the same deductible prodovtsu deserved 5

Quickly came to CET, all in one package. Look at the rules

Lidé, kteří si prohlížejí IGB30N60H3 pak koupil

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